Драйвер FET-IGBT L6393D ST

L6393D, ПЛИС/драйвер МОП-транзистора, полумостовой, питание 10В-20В, 430мА, задержка 125нс, SOIC-14

The L6393D is a high voltage half-bridge Gate Driver manufactured with the BCD™ offline technology. It is a single chip half bridge gate driver for the N-channel power MOSFET or IGBT. The high-side (floating) section is designed to stand a voltage rail up to 600V. The logic inputs are CMOS/TTL compatible down to 3.3V for the easy interfacing microcontroller/DSP. The IC embeds an uncommitted comparator available for protections against overcurrent and over-temperature.

• CMOS/TTL inputs with hysteresis
• Integrated bootstrap diode
• Uncommitted comparator
• Adjustable dead-time
• Compact and simplified layout
• Bill of material reduction
• Flexible, easy and fast design
• dV/dt immunity of ±50V/ns in full temperature range
• Driver current capability - 290mA Source and 430mA sink
• 75/35ns Rise/fall with 1nF load switching time

Полупроводники - МикросхемыДрайверы и Интерфейсы
Код: 2311309

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